News
14 A is equivalent to 1.4 nm and IMEC expects it will be succeed by 10 A or 1 nm in 2029. IMEC sees that progression carrying ...
Imec has announced a significant breakthrough in mobile RF transistor performance with a GaN-on-silicon enhancement-mode ...
Electrostatic modification of functional materials by electrolytic gating has demonstrated a remarkably wide range of density modulation, a condition crucial for developing novel electronic phases in ...
By the mid-2000s, however, further voltage reductions became impractical, even as transistor density continued to increase. This divergence led to a steady rise in power density and, ...
May 21, 2024: Printed organic transistors achieve record performance and 3D circuit density (Nanowerk Spotlight) Organic semiconductors have long held promise for enabling deformable electronic ...
This article explores the evolution of transistors, the advantages of GAA devices, and how to achieve GAA success through co-optimization. ... further increasing the overall transistor density. Fig. 1 ...
Three-Dimensional (3D) Transistors: Stacking transistors vertically in a 3D configuration to increase transistor density on a chip without reducing individual transistor size.
Some results have been hidden because they may be inaccessible to you
Show inaccessible results