Gate formation for 28nm node is LELE (2 times Litho, 2 times etch process) approach, which is different from traditional poly LE (Litho-Etch) process. Poly line and poly LEC (line end cut) formed ...

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Abstract: A 28-GS/s time-interleaved ADC suitable for PAM4 optical and backplane applications is presented. The architecture uses a two-rank 2×(4:4) sampling network to interleave 32 8b SAR ADCs ...