Wafer scrap rates have reached up to 5 to 10 percent, a rate that is hard to bear for manufacturers when the price for a wafer is NT$300,000, he said. The institute uses a nanosecond pulsed laser ...

We developed a new backside contact formation process for SiC power devices based on pulsed laser annealing providing an ohmic contact with lower contact resistance and better adhesion properties than ...

The calculation accuracy of the molecular dynamic model was verified by ablating the surface of silicon carbide wafers with a laser pulse width of 37 ps. On this basis, this paper further investigated ...

Using picosecond ultrasonics Picosecond ultrasonics (PULSE technology) is a pump-probe technique that uses ultrafast laser pulses – at approximately 200fs – for metal film metrology; this includes ...

Wafer Stealth Dicing / Motion Control for Laser Based Semiconductor Wafer Dicing. 5-DOF Stage for Wafer Stealth Dicing / Semiconductor Wafer Dicing. Video Credit: PI (Physik Instrumente) LP ...

The rapid growth in applications such as wafer grooving and precision cutting of display stacks for mobile and next-generation IT devices is accelerating the need for laser tools with higher ...

At his keynote titled “Silicon Carbide Mass Commercialization and Future Trends” at APEC 2023, Victor Veliadis, executive director and CTO at Power America, outlined wafer cost, defects, scalability ...

Soaring silicon carbide (SiC) demand from electric vehicles (EV) is leading to a tight supply of 6-inch SiC wafers, of which the cost will unlikely go down. Abstract To raise SiC capacity while ...