Abstract: Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky ...

In the present work, nanocellulose-gated indium tin oxide neuromorphic transistors are fabricated. The device exhibits good electrical performance. Short-term synaptic plasticities were mimicked, ...

This amorphous phase changes to the hexagonal phase upon alumina encapsulation. A 4-nm-thick Te transistor with a PO of 7% exhibits outstanding device performances, with a field-effect mobility up to ...

Despite the benefit of DEP for improving sensor operation, its use in conjunction with GFET sensors is very limited in the literature. Most notably, Kumar et al. used DEP to enhance GFET sensor ...

Transistors are the fundamental building blocks behind today's electronic revolution, powering everything from smartphones to powerful servers by controlling the flow of electrical currents.

Scientists have built the world’s fastest transistor using laser pulses and graphene, paving the way for ultrafast computers in AI, space, and medicine.

Past studies have explored the possibility of using these materials to fabricate p-channel thin-film transistors (TFTs), devices used to control and amplify the flow of charge carriers in electronics ...

Recently in material science news from China we hear that [Hailin Peng] and his team at Peking University just made the world’s fastest transistor and it’s not made of silicon. Before we tell ...