The MBCFET design reportedly has the edge over other gate-all-around transistor designs, with a view to the 1nm node. Dave James . Published: May 20, 2019. Samsung . By 2021 ...

Here, MBCFET provides greater design flexibility by controlling the nanosheet width. Samsung claims that its first 3-nm GAA process node utilizing MBCFET will allow up to 35% decrease in area, 30% ...

In addition, the Samsung MBCFET chip process uses nanosheets to construct transistors. Presently , Samsung has already registered a trademark for MBCFET. Samsung said that both methods can achieve ...

Samsung's GAA technology, Multi-Bridge-Channel FET (MBCFET), with its flexible design capacity, and improved power and performance, is crucial for continuing process migration.

Samsung calls its implementation of 3 nm GAAFET transistors multi-bridge-channel field-effect transistors (MBCFET). The company touts a series of advantages over 7nm FinFET, as MBCFET can work at ...

The company claims to offer "four FinFET-based processes from 7nm down to 4nm that leverage extreme ultraviolet (EUV) technology, as well as 3nm GAA or MBCFET." ...

Looking even further out, Samsung said its second-gen 3nm is now expected in 2023 and that its 2nm process note with MBCFET is currently in the early stages of development with mass production ...

We seek to continue this leadership with the world’s first 3nm process with the MBCFET,” said Dr. Siyoung Choi, head of Samsung’s foundry division.

Both companies are taking similar paths to 2nm, though, with Samsung choosing MBCFET, which stands for Multi-Bridge Channel Field Effect Transistor, a nanosheet design.

This is the first time Samsung's new Multi-Bridge-Channel FET (MBCFET), their new GAA technology, "defies the performance limitations of FinFET".

In addition, MBCFET™’s compatibility with FinFET processes means the two can share the same manufacturing technology and equipment, which accelerates process development and production ramp-up.

TSMC established a 2nm project R&D team last year to find a feasible path for development. Considering cost, equipment compatibility, technology maturity, and performance, 2nm adopts the MBCFET ...