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The initiative is planned to ensure the city develops sustainably while keeping pace with rapid technological advancements.
A Crucible Design for Growing p-Type SiC with Improved Release Uniformity of Al Source - IEEE Xplore
The n-channel SiC Insulated Gate Bipolar Transistor (IGBT) devices have emerged as a prominent contender in the domain of contemporary high-efficiency power electronic systems, predominantly due to ...
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