The team created the high electron mobility transistor (HEMT) structure on a 200 mm silicon substrate with a process that will scale to larger industry-standard wafer sizes.

Engineers from Stanford University are claiming to have broken new ground with the first post-process diamond integration of ...

On the other side, GaN on Si HEMT offers news capabilities, such as the possibility to work at higher frequencies and the more and more competitive manufacturing cost.

By improving the crystal quality and streamlining the layer structure to moderate the electric field in a GaN HEMT structure with few surface traps by using its proprietary n-type GaN cap layer ...

Lateral GaN-on-Si HEMTs are already commercially available, but are limited to a blocking voltage of 650 V due to limited GaN layer thicknesses.

By integrating a negative capacitance dielectric, the researchers have removed this constraint. They say their results demonstrate that negative capacitance can break conventional electrostatic limits ...

The GaN and AlGaN layers are deposited by epitaxy on a silicon substrate. The enhancement-mode power GaN transistor has a p-HEMT structure.

Infineon is adding two more families of high and medium voltage GaN transistors to its portfolio of CoolGaN HEMTs spanning 40 V to 700 V. According to the company, this expansion will enable customers ...

ROHM introduces the industry’s highest (8V) gate breakdown voltage (rated gate-source voltage) technology for 150V GaN HEMT devices ROHM introduces the industry’s highest (8V) gate breakdown ...

Mitsubishi Electric handled the design, manufacture, evaluation and analysis of the GaN-on-Diamond HEMT and AIST developed the direct bonding technology.

1500 V recessed-free GaN-based HEMTs with ultrathin barrier epitaxial structure Journal: Applied Physics Letters Published: 2024-12-02 DOI: 10.1063/5.0235148 Affiliations: 3 Authors: 13 Go to article ...

Researchers have advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers that make up the device. The team created the high electron ...