Incize, a Belgian semiconductor characterisation and modelling company, and Atomera, a US semiconductor materials company, ...

Engineers from Stanford University are claiming to have broken new ground with the first post-process diamond integration of ...

AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have become a promising candidate for use in efficient power conversion applications. In order to realize ...

This article, based on a presentation at APEC 2025, outlines PCB design recommendations tailored for converters incorporating GaN HEMTs.

In this article, we summarize a novel concept that combines an integrated GaN HEMT with silicon Insulated Gate Bipolar Transistors (IGBTs).

We proposed a new model for gated-anode diodes (GADs) based on gallium nitride (GaN) high-electron mobility transistors (HEMTs) to optimize the device structure toward efficient microwave ...