While AI is grabbing headlines in today’s mainstream media for its transformative potential, it’s not a new technology. Its ...

The AW2K21 is also suitable for use as a unidirectional protection MOSFET in load switch applications, where it maintains the industry's lowest ON-resistance. At the same time, ROHM is further pushing ...

Engineers from Stanford University are claiming to have broken new ground with the first post-process diamond integration of ...

This article, based on a presentation at APEC 2025, outlines PCB design recommendations tailored for converters incorporating GaN HEMTs.

In this article, we summarize a novel concept that combines an integrated GaN HEMT with silicon Insulated Gate Bipolar Transistors (IGBTs).

We proposed a new model for gated-anode diodes (GADs) based on gallium nitride (GaN) high-electron mobility transistors (HEMTs) to optimize the device structure toward efficient microwave ...