While AI is grabbing headlines in today’s mainstream media for its transformative potential, it’s not a new technology. Its ...

In recent years, an increasing trend towards GaN integration can be observed, enabled by the lateral structure of the GaN technology. A key improvement over a discrete implementation is the ...

This work presents the design, fabrication, and measurements of a GaN-HEMT with a back-gated segment and pull-down pin in a GaN-on-Si technology. The device is designed for the use in high voltage ...