Engineers from Stanford University are claiming to have broken new ground with the first post-process diamond integration of ...

We proposed a new model for gated-anode diodes (GADs) based on gallium nitride (GaN) high-electron mobility transistors (HEMTs) to optimize the device structure toward efficient microwave ...

Infineon’s rad-hard GaN HEMT is the first in-house device qualified to JANS MIL-PRF-19500/794, DLA’s highest quality grade.

Gallium nitride (GaN) transistors have radiation tolerance that makes them a good fit for a growing variety of space industry applications, and Infineon Technologies just upped its GaN game with the ...

Finally, Section 4 presents the conclusions drawn from the findings. 2 Device structure and simulation methodology The cross-sectional view of the conventional and proposed AlGaN/GaN HEMTs are shown ...

This paper presents an effective method of improving the linearity of GaN/AlGaN high-electron mobility transistors (HEMTs) by optimizing barrier (AlGaN Layer) thickness or implementing doped GaN cap ...

In GaN HEMTs, charge transport primarily depends on a two-dimensional “electron gas” (2DEG). The 2DEG forms because tensile strain at the interface between AlGaN and GaN leads to spontaneous ...

Enhancement-mode p-GaN HEMTs with a source-connected buried metal structure deliver robust single-event radiation hardness A collaboration between engineers at Nanjing University and CorEnergy ...

GaN-based devices based on the lateral HEMT structure have shown strong growth in power conversion across many diverse applications.

This article summarizes some of the defects seen during GaN wafer processing and the characterization techniques that can be used to detect them.

The layered structure is likely to be a based on AlN/GaN/AlN quantum well HEMTs that were the subject of research at Cornell University. Hickman published on the high breakdown voltage achievable in ...