Technological innovations in power electronics are not only essential for the success of the energy transition, they also ...

IceGaN is a form of smart power HEMT that features advanced sensing and protection capabilities. According to Daniel Murphy, ...

At the upcoming PCIM Conference (6th - 8th May, Nuremberg, Germany) Fraunhofer IAF will present a paper on a novel GaN ...

One implementation of the two materials in RF power amplifiers is as a stack, known as GaN-on-SiC, which was intended to give ...

Abstract: A simple and physically insightful model for predicting the switching transients of SiC MOSFETs and GaN HEMTs in power electronic half-bridges is proposed in this research. The proposed ...

Mr Gan said the task force is still working out the details of its composition and key tasks ahead, adding that the government’s main guiding principle is to be “as transparent as possible”.

Cambridge GaN Devices’s hybrid architecture for power ... CGD's Combo ICeGaN pairs smart the company’s ICeGaN HEMT ICs and IGBTs. Products based on the Combo ICeGaN architecture take advantage ...

Infineon is also planning the release of MV BDS switches rated from 40 V – 120 V for static, battery disconnect applications that feature the Schottky gate GaN HEMT technology, in a two-drain, single ...

Through phonon band structure engineering, we reduced TBR in GaN/BAs interfaces by over 8-fold compared to GaN/diamond interfaces. The combination of low TBR and high thermal conductivity ...

The decline undercut a prior interim swing low of $28.75 from December thereby triggering a potential trend reversal signal as that swing low is part of the price structure of an uptrend of higher ...