Some innovations in GAA devices, e.g. Forksheet FETs，Tree FET, Fishbone FET，CombFET are also introduced by the authors.

It has scaling property that will enable another two nodes. Then there’s the CFETs, (complimentary FET stacked), which is inspired by the nanosheet, but in a stacked configuration (see figure 3.)” GAA ...

The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...

GBT plans to develop GAA FET support for all its EDA productivity enhancement software tools with the goal of saving significant design time, enabling IC designers to maintain competitive schedules.

Samsung is adopting the GAA architecture for 3-nm process nodes to overcome the physical scaling and performance limitations of the FinFET architecture. Samsung’s fab executives are quick to point out ...

Moreover, a decrease in the nanowire width of the GAA FET leads to an improvement in the pH sensitivity. The extended-gate approach with the nanoscale FET-based transduction can pave the way for a ...

In this article, Nadine Collaert (distinguished member of technical staff at imec), Anabela Veloso (principal member of technical staff at imec) and Trong Huynh-Bao (R&D engineer at imec) highlight ...