Some innovations in GAA devices, e.g. Forksheet FETs，Tree FET, Fishbone FET，CombFET are also introduced by the authors. Beyond GAAFETs, CFETs also known as 3D Stacked FETs (3DS-FETs) are ...

GAA may have a similar lifetime to finFET. “Most likely it’s going to be around for 10 years,” says Moroz. “But around 2030, I expect the industry to switch to stacked transistors where you have two ...

The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...

GBT plans to develop GAA FET support for all its EDA productivity enhancement software tools with the goal of saving significant design time, enabling IC designers to maintain competitive schedules.

Samsung is adopting the GAA architecture for 3-nm process nodes to overcome the physical scaling and performance limitations of the FinFET architecture. Samsung’s fab executives are quick to point out ...

Moreover, a decrease in the nanowire width of the GAA FET leads to an improvement in the pH sensitivity. The extended-gate approach with the nanoscale FET-based transduction can pave the way for a ...

The vertical nanowire FET Gate-all-around (GAA) nanowire/nanosheet FETs are, to a certain extent, a natural evolution of today's FinFET technology. In these devices, the gate is fully wrapped around ...