Intel has published a paper about its 18A (1.8nm-class) fabrication process at the VLSI 2025 symposium, consolidating all its ...

Intel 18A manufacturing node is expected to offer 25% higher frequency or 36% power efficiency compared to Intel 3.

The University of Tokyo (UTokyo) and TSMC (TWSE: 2330, NYSE: TSM) today announced the opening of the "TSMC-UTokyo Lab", dedicated to advancing semiconductor research, education and talent incubation.

The advanced semiconductor material gallium nitride will likely be key for the next generation of high-speed communication ...

Integrated circuits have evolved from simple microchips to complex, nanoscale marvels, driving advances in computing, ...

The new 7-bit 150 GSa/s Digital-to-Analog Converter (DAC), fabricated in a 5nm FinFET CMOS process, achieves data rates of up ...

MEIS Development Team, Korea Materials and Analysis Corporation, Techno 8-ro 33, Yuseng-gu, Daejon 305-500, Republic of Korea Varian Semiconductor Equipment, Applied Materials Implant Division, ...

TAIPEI (Taiwan News) — TSMC announced Thursday the establishment of its first joint semiconductor laboratory with an overseas university, the TSMC-UTokyo Lab, at the University of Tokyo.

Explore next-gen transistor, from InGaOx GAA structures to Intel’s RibbonFET, unlocking higher density, efficiency, and performance.

The GeForce RTX 5050 appears to exhibit significantly elevated clock speeds. Kiebel has detailed the graphics card's ...

Infineon introduces rad-hard GaN transistors, including one of the first DLA JANs-certified GaN devices, for space applications. Infineon Technologies AG has launched the first of a new family of ...