Researchers are making progress in developing new types of transistors, called finFETs, which use a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...

The first well-behaved inversion-mode InGaAs FinFET with gate length down to 100 nm with ALD Al2O3 as gate dielectric has been demonstrated. Using a damage-free sidewall etching method, FinFETs with ...

To control precisely where on surfaces ALD films grow, scientists are using beams of ions, ... into modern nanoelectronic components called FinFETs, or fin field-effect transistors.

The FinFET manufacturing technology has scaled well from 22-nm chips all the way down to 5-nm chips. The gate-all-around ("GAA") is the next-generation semiconductor process technology, offers two ...

Dubbed the Centura Integrated Gate Stack system, this machine will be the key to creating 22nm high-κ transistors, and a major proponent in the shift to sub-22nm FinFET "3D" transistors.

When it comes to 3D transistors, you've probably heard of FinFET -- the 3D, "Tri-gate" transistors that are taking Intel (and eventually other silicon foundries) to 22nm and beyond -- but now a ...

ASM International NV (0NX3) has received a new Buy rating, initiated by Stifel Nicolaus analyst, Florian Sager. Florian Sager’s rating is based on ASM International NV’s strong position in the ...

Atomic Layer Deposition (ALD) Equipment Market growth is driven by semiconductor miniaturization, advanced energy storage needs, and eco-friendly innovations in thin-film deposition.Austin, May 30 ...

The finFETs might enable engineers to sidestep a problem threatening to derail the electronics industry. New technologies will be needed for industry to keep pace with Moore's law, an unofficial rule ...