News

IEEE2d
Incremental Drain-Voltage-Ramping Training Method for Ferroelectric Field-Effect Transistor Synaptic Devices
Abstract: We demonstrate a HfZrO 2 (HZO) ferroelectric field-effect transistor fabricated on a silicon-on-insulator substrate, targeting MHz synaptic device applications. Stable multistate weights ...
Semiconductor Engineering2d
SRAM Cell Scaling With Monolithic 3D Integration Of 2D FETs (Penn State)
A new technical paper titled “Enabling static random-access memory cell scaling with monolithic 3D integration of 2D ...
C&EN3d
Organic Single-Crystalline p–n Heterojunctions for High-Performance Ambipolar Field-Effect Transistors and Broadband Photodetectors
Materials Research Institute and School of Physics and Astronomy, Queen Mary University of London, Mile End Road, E1 4NS London, U.K. Materials Research Institute and School of Physics and Astronomy, ...
C&EN3d
Comprehensive Non-volatile Photo-programming Transistor Memory via a Dual-Functional Perovskite-Based Floating Gate
Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan Article Views are the COUNTER-compliant sum of full text article downloads since ...
IEEE5d
Diamond thin-film recessed gate field-effect transistors fabricated by electron cyclotron resonance plasma etching
Abstract: A new technique for etching boron-doped homoepitaxial diamond films was used to fabricate mesa-isolated recessed gate field-effect transistors that operate at temperatures up to 350 degrees ...