Abstract: In this letter, a high-power microwave (HPM) hardened structure for a split-gate enhanced power U-shaped trench-gate metal-oxide-semiconductor (SGE-UMOS) field-effect transistor is proposed.

A new technical paper titled “Enabling static random-access memory cell scaling with monolithic 3D integration of 2D ...

Transistors are fundamental to microchips and modern electronics. Invented by Bardeen and Brattain in 1947, their development ...

which we call field-induced contacts light-emitting transistor (FICOLET), to fabricate high-efficiency electroluminescent dual-gate organic field-effect transistors. The FICOLET is a dual-gate ...

JOHN GOSDEN has dumped jockey Kieran Shoemark after Field Of Gold's narrow defeat in Saturday's 2000 Guineas. The six-time champion trainer had discussions with co-trainer son Thady earlier this ...

Prepare for another frenzied rush to grab the latest Pokemon TCG set, because a new split expansion is on the way this July. Rather than fans scrambling to get a singular line of products ...

Peking University transistor could outperform Intel, TSMC, and Samsung’s top silicon chips Full gate coverage boosts ... the paper suggests that the new 2D GAAFET could rival or even surpass ...

A technical paper titled “Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe2 transistors” was ...

Bill Gates didn’t mince words on what he thinks about Elon Musk in an interview with the Financial Times that was published on Thursday. The Microsoft mogul accused the Tesla CEO of “killing the world ...