Researchers have unveiled the world's first fully two-dimensional field-effect transistor ... conventional FETs made from silicon, these 2D FETs suffer no performance drop-off under high voltages ...

Over the past several years, computer engineers have been searching for new materials that will allow further miniaturization of silicon field-effect ... for top-gate 2D transistors, Nature ...

A new way to switch transistors could overcome the power consumption and undesirable current leakage problems encountered in conventional nanoscale field-effect devices. The new technique, which works ...

The Peking team has fabricated what the paper describes as a "wafer-scale multi-layer-stacked single-crystalline 2D GAA configuration ... GAAFET. Gate-all-around field-effect transistors ...

Researchers at Berkeley Lab, using a trio of single-atom-thick wonder materials -- graphene, boron nitride, and molybdenite -- have created the first all-2D field-effect transistor. This FET could ...

each of which consists of a monolayer of atoms and could be suitable for the construction of ultra-scaled field-effect transistors (FETs). They have now investigated their properties under the "ab ...

In field-effect transistors, the resulting trapped charges can lead to large hysteresis and device drifts, particularly when common amorphous gate oxides (such as silicon or hafnium dioxide) are used, ...

2D materials such as tungsten disulfide (WS 2) can play a crucial role in the fabrication of future logic chips. Due to their exceptional properties, they promise to enable ultimate gate length ...

The group applied this process to develop a new structure for 2D semiconductor logic circuits. Notably, they used the 1D metals as a gate electrode ... 2D MoS2 field-effect transistors, Nature ...