This article reports on the impact of back gate bias on the transport properties and performance of 22 nm fully depleted silicon-on-insulator (FD-SOI) MOSFETs. FD-SOI MOSFETs were analyzed as a ...

In this paper, n-MOSFET and p-MOSFET are stressed using Fowler-Nordheim (F-N) tunneling and substrate hot carrier injection (HCI) to induce trapped charges. The inversion mobility is extracted and ...