Symposium on VLSI Technology and Circuits (VLSI 2025), a unique world-class international conference where experts from ...

A new technical paper titled “Demonstration of Vertically Stacked ZnO/Te Complementary Field-Effect Transistor” was published ...

Moreover, 2-MeTHF-processed organic thin film transistors (OTFTs) based on these polymers exhibited a higher n-type transport performance. Notably, the P2-based device afforded the maximum electron ...

Meanwhile, the simulation results between the Fourier model and the DPL model were compared to emphasize the importance of constructing the non-Fourier thermal mechanism. Moreover, using the present ...

This study presents the first observation of single-event transients (SETs) induced by heavy ions in complementary FETs (CFETs). The influence of radioactive ion particles, such as alpha particles and ...

Infineon Technologies AG has launched the first of a new family of radiation-hardened (rad-hard) gallium nitride (GaN) transistors, based on its CoolGan technology.Complementing the company’s rad-hard ...

The transistors are encased in a hermetically sealed ceramic surface mount package and are single event effect (SEE) hardened up to LET (GaN) of 70 MeV.cm2/mg (Au ion). Two devices, which are not JANS ...

The scalable method to create self-healing stretchable transistors and circuits introduced by the researchers could support the development of implantable devices that can measure electrophysiological ...

Technology Best quantum 'transistor' yet could lead to more accurate computers. Microwaves can control a single quantum bit more precisely than ever before, creating a device similar to a quantum ...