Dec 18, 2023 23:00:00 Three chip manufacturers, Intel, Samsung, and TSMC, announce demonstrations of the future three-dimensional transistor structure 'CFET' ...

The fabrication of a Complementary-Field Effect Transistor (CFET) technology recently described in [2] suggests that it is possible to directly fabricate n-MOS transistors on top of p-MOS transistors ...

The double-row CFET standard cell (with two rows of stacked devices) is then formed by mirroring two base cells, which share the same MRW for signal connectivity (see below). Geert Hellings, Program ...

Imec has produced the first electrically functional CMOS CFET devices with stacked bottom and top source/drain contacts. While the results were obtained with both contacts patterned from the frontside ...

Intel patent suggests 'stacked forksheet transistors' could enable sub-3nm chips Gate-all-around transistors may be key to keeping Moore's Law alive By Adrian Potoroaca January 24, 2022, 11:11 ...

Home; Articles; p-Type Oxide Thin-Film Transistor with Unprecedented Hole Field-Effect Mobility for an All-Oxide CMOS CFET-like Inverter Suitable for Monolithic 3D Integration ...