We demonstrated selective regrowth of InGaAs/InP multi-quantum wells (MQWs) on silicon-on-insulator (SOI) wafers for telecom band emission. The MQWs growth was ...

Abstract: Room-temperature wafer bondings between a p-InGaAs grown on a p-InP substrate and a n-InGaAs grown on a n-GaAs substrate were investigated, changing the applied voltage of Fast Atom Beam ...