A double-sided 1200-V/600-A multichip half-bridge insulated gate bipolar transistor (IGBT) module was fabricated utilizing molybdenum as stress-relief buffer and sintered nanosilver as die-attachment.

In this paper, an embedded GaN half-bridge power module with double-sided cooling, low inductance, low thermal resistance, on-package decoupling capacitors, localized common mode filter, and ...