News

Revealing hidden transformations in 2D materials with atomic force microscopes
Researchers at the Institute of Physics in Zagreb, Croatia, in collaboration with international partners, have showcased new methods for visualizing atomic-scale changes in advanced materials.
Overlapping moiré lattices in 2D materials yield tunable quantum properties and novel atomic motifs
A joint research team has successfully developed a two-dimensional (2D) quantum material platform through the superposition of moiré lattices.
C&EN1d
Solvation Effects on the Electrical Properties of a Microfluid-Assisted Solution Field-Effect Transistor with Atomically Thin MoS
Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, 2-1-1, Katahira, Aoba-Ku, Sendai 9800877, Japan ...
IEEE3d
A Monolithic Bi-Directional GaN/SiC Hybrid Field-Effect Transistor
In this work, we present a monolithic bi-directional GaN/SiC hybrid field-effect transistor (BD-HyFET). The device combines the merits of SiC junction field-effect transistor (JFET) structure and ...
C&EN3d
Organic Single-Crystalline p–n Heterojunctions for High-Performance Ambipolar Field-Effect Transistors and Broadband Photodetectors
Materials Research Institute and School of Physics and Astronomy, Queen Mary University of London, Mile End Road, E1 4NS London, U.K. Materials Research Institute and School of Physics and Astronomy, ...
IEEE6d
Ab Initio Computational Screening and Performance Assessment of van der Waals and Semimetallic Contacts to Monolayer WSe
are identified as promising solutions to achieving Schottky-barrier-free and low-contact-resistance p-type contacts for WSe2 p-type field-effect transistor (pFETs). Good candidates of p-type contact ...
Design And Reuse6d
TSMC dazzles in Amsterdam
TSMC laid out a dazzling array of technologies at its 2025 Europe Technology Symposium in Amsterdam yesterday.