This brief presents an ultra-low voltage level shifter (LS) with fast and energy-efficient voltage conversion from the deep subthreshold region to the superthreshold region. The proposed LS achieves ...

Samsung Electronics is recalibrating its semiconductor foundry roadmap, putting the spotlight squarely on refining its 2 nm ...

To fabricate their devices, Li and co-workers began by using pulsed laser deposition (PLD) to grow a roughly 50 nm-thick film ...

Total ionizing dose (TID) response of pMOS transistors featuring a commercial 65 nm CMOS technology was studied by X-ray irradiation up to 1 Grad (SiO2), which emulated total dose target in the LHC ...

14 A is equivalent to 1.4 nm and IMEC expects it will be succeed by 10 A or 1 nm in 2029. IMEC sees that progression carrying ...

Bets farm on 2nm Samsung’s foundry arm is pressing pause on its hyped 1.4nm production ambitions, opting instead to dump ...

Intel has published a paper about its 18A (1.8nm-class) fabrication process at the VLSI 2025 symposium, consolidating all its information about the manufacturing technology into a single document. The ...

Vertical field effect transistors (VFETs) using graphene and transition metal dichalcogenide (TMD) heterostructures are promising for downsizing the channel length to a monolayer TMD thickness of 0.65 ...

By unraveling the technology behind memory storage at the transistor level, you’ll discover how data is constantly read, written, and retained, making our digital world function seamlessly.

Electrolyte transport through an array of 20 nm wide, 20 μm long SiO2 nanofluidic transistors is described. At sufficiently low ionic strength, the Debye screening length exceeds the channel width, ...