Samsung Electronics is recalibrating its semiconductor foundry roadmap, putting the spotlight squarely on refining its 2 nm ...

To fabricate their devices, Li and co-workers began by using pulsed laser deposition (PLD) to grow a roughly 50 nm-thick film ...

Use precise geolocation data and actively scan device characteristics for identification. This is done to store and access information on a device and to provide personalised ads and content, ad and ...

Vertical field effect transistors (VFETs) using graphene and transition metal dichalcogenide (TMD) heterostructures are promising for downsizing the channel length to a monolayer TMD thickness of 0.65 ...

Although gate-all-around field-effect transistor (GAAFET) possess stronger gate control capabilities compared to FinFET, continuous scaling down of the horizontal gate length remains challenging. In ...

Hardware The world's smallest 'ruler' can measure down to a mere 0.1 nm—the width of a single atom or as small as TSMC and Intel would like their transistors to be News ...

The company also said it expects to have 1 trillion transistors on a single package by then as well.

Both 1.4 nm and 2 nm chips will be fabricated using the gate-all-around (GAA) technology that Samsung pioneered on its 3-nm chips released this year. Archrivals TSMC and IFS will transition from Fin ...

The sub-1 nm chip technology is already in sight, and imec’s ITF World event in Antwerp, Belgium provided a sneak peek into the major process nodes and transistor architectures serving sub-1 nm with ...