The design and modeling of dielectric superjunction transistors using combinations of ultrahigh permittivity materials and high-mobility materials are described. We show that placing high dielectric ...

We present the first measurement results for silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) and SiGe BiCMOS circuits operating in the sub-1-K regime. Robust transistor operation of ...

“One key to one lock” hybrid sensor configuration is rationally designed and demonstrated as a direct effective route for the target-gas-specific, highly sensitive, and promptly responsive chemical ...

Phoenix Suns superstar Kevin Durant teaming up with Victor Wembanyama and De’Aaron Fox in San Antonio could make for a devastating trio. The fans think so. The Arizona Republic placed a poll ...

But these transistors avoided major overheating issues thanks to their smart design. Temperature rose to around 283 degrees Celsius during use—hot, but still safe for GaN-based electronics.

Swapping transistors Gallium nitride is the second most widely used semiconductor in the world, just after silicon, and its unique properties make it ideal for applications such as lighting, radar ...

A comprehensive structural and electrical characterization of solution-processed blend films of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) semiconductor and poly(α-methylstyrene) ...

These prototype processors made from atomically thin materials offer a glimpse into a post-silicon-transistor future, but scaling challenges remain. Read the paper: A complementary two-dimensional ...

Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the rules. They've created a cutting-edge transistor using gallium-doped ...

Researchers at the Institute of Industrial Science, The University of Tokyo, have produced a new type of transistor, which is a key component of electronics. The transistor channel was constructed ...