A new technical paper titled “Simulation of Vertically Stacked 2-D Nanosheet FETs” was published by researchers at Università di Pisa and TU Wien. Abstract “We present a simulation study of vertically ...
Rigorous testing is still required, but an abstraction layer can significantly reduce errors in the fab while optimizing ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback