At its North American Technology Symposium 2025 on Wednesday, the company disclosed that the new node will rely on its 2nd Generation gate-all-around (GAA) nanosheet transistors and will offer ...

The world is heading into the age of gate-all-around (GAA) or nanosheet transistors. While it was never going to save Moore’s Law by itself, the new device is opening the door to continuous ...

TSMC notes that the current A14 development is progressing smoothly with yield performance ahead of schedule. As highlighted by Tom’s Hardware, A14 will harness 2nd Gen gate-all-around (GAA) nanosheet ...

At 2nm and/or 3nm, leading-edge foundries and their customers eventually will migrate to a GAA transistor type called the nanosheet FET. GAA FETs provides greater performance at lower power than ...

GAA: A brief introduction. GAA, the next-generation semiconductor process technology, offers two unique advantages over FinFETs. ... In this nanosheet-based implementation, the width of the nanosheet ...

Institute researchers fabricated GAA nanosheet transistors with seven levels of stacked silicon channels, more than twice as many as state-of-the-art today, with widths ranging from 15nm to 85nm. The ...

A seven-sheet GAA has a “3X improvement over the usual 2-level stacked nanosheet GAA transistors,” said Sylvain Barraud, a senior integration engineer at Leti, in a paper. On the surface, the scaling ...

TSMC claims its upcoming N2 manufacturing node is ahead of schedule on defect reduction, even though it is the company’s first attempt at gate-all-around (GAA) nanosheet transistor technology ...

Here, MBCFET provides greater design flexibility by controlling the nanosheet width. Samsung claims that its first 3-nm GAA process node utilizing MBCFET will allow up to 35% decrease in area, 30% ...

TSMC is currently using the age-old FinFET process for its N3 (3nm) process, but it's expected to transition to nanosheet GAA transistors when it begins production at 2nm in 2025.

GAA nanosheet technology improves density while providing power and performance improvements, but it's only used on the most cutting-edge process nodes.