Intel is "two to three years behind Samsung" in the race to 1nm silicon The MBCFET design reportedly has the edge over other gate-all-around transistor designs, with a view to the 1nm node ...

Samsung held its foundry forum event and detailed upcoming process nodes and improvements, including new nanosheet GAAFETs arriving for the 3nm node.

Samsung’s 3nm Gate-All-Around (GAA) process, 3GAE, development is on track. The Process Design Kit (PDK) version 0.1 for 3GAE was released in April to help customers get an early start on the design ...

Samsung calls its implementation of 3 nm GAAFET transistors multi-bridge-channel field-effect transistors (MBCFET). The company touts a series of advantages over 7nm FinFET, as MBCFET can work at ...

Both companies are taking similar paths to 2nm, though, with Samsung choosing MBCFET, which stands for Multi-Bridge Channel Field Effect Transistor, a nanosheet design.

Samsung demonstrates 3nm MBCFET chip: using nanochip structure to make transistors. It hopes to take the lead in the 3nm process ...

Samsung's GAA technology, Multi-Bridge-Channel FET (MBCFET), with its flexible design capacity, and improved power and performance, is crucial for continuing process migration.

Looking even further out, Samsung said its second-gen 3nm is now expected in 2023 and that its 2nm process note with MBCFET is currently in the early stages of development with mass production ...

Multi-Bridge-Channel FET (MBCFET™), Samsung's GAA technology implemented for the first time ever, defies the performance limitations of FinFET, improving power efficiency by reducing the supply ...

Samsung has begun mass production of 3nm semiconductor chips. The advanced chips use the GAA (gate-all-around) transistor architecture.

Samsung’s 3nm node will bring a 35% decrease in area, 30% higher performance or 50% lower power consumption compared to its 5nm process.

In addition, MBCFET™’s compatibility with FinFET processes means the two can share the same manufacturing technology and equipment, which accelerates process development and production ramp-up.