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Siemens Digital Industries Software announced a significant expansion of its collaboration with Samsung Foundry, including extending certification for many of Samsung’s most advanced process ...
These certifications encompass Samsung's cutting-edge FinFET and MBCFET processes - including 14nm through 2nm nodes (SF2/SF2P) - enabling mutual customers to leverage Siemens' Calibre® software, ...
Samsung sought to lead the transition to GAAFET with its MBCFET architecture, initiating production in 2022, but has yet to master a yielding process. TSMC will introduce its GAA nanosheet transistor ...
Samsung Electronics is reportedly promoting Molded Underfill (MUF) materials in its advanced packaging processes. Since SK Hynix has already adopted MUF technology for its High Bandwidth Memory ...
Samsung Electronics Co., Ltd., a world leader in advanced semiconductor technology, today announced that it will deliver the next generation Arm® Cortex-X CPU optimized on Samsung Foundry's ...
Samsung announced its initial production of 3nm Multi-Bridge-Channel FET (MBCFET), based on Samsung’s GAA technology in 2022. GAA technology allows further device scaling beyond the FinFET generation, ...
This led to building the most advanced MBCFET™ (multi-bridge-channel FET) and Backside PDN, enabling chip sizes of 2 nm and below and ushering in the ‘Beyond Moore’ era.
It's reported that Samsung Electronics is looking to widen its lead in Gate-All-Around (GAA) platform. The plan is to increase the number of nanosheets from three to four starting with the 1.4 nm ...
We have demonstrated a novel three-dimensional multibridge-channel metal-oxide-semiconductor field-effect transistor (MBCFET). This transistor was successfully fabricated using a conventional ...
Both companies are taking similar paths to 2nm, though, with Samsung choosing MBCFET, which stands for Multi-Bridge Channel Field Effect Transistor, a nanosheet design.
TrendForce has revealed top 10 trends that are expected to take place across various segments in the tech industry.
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