As transistor gate lengths are scaled towards the 10-nm range, thermal device design is becoming an important part of microprocessor engineering. Decreasing dimensions lead to nanometer-scale hot ...

In this letter, low frequency noise (LFN) of elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) is systematically investigated for the first time. EMMO TFT possesses distinctive LFN ...

Field-effect transistors (FETs), when functionalized with proper biorecognition elements (such as antibodies or enzymes), represent a unique platform for real-time, specific, label-free transduction ...

Aromatic soluble polyimides (PIs) have been widely used in organic field-effect transistors (OFETs) as gate dielectric layers due to their promising features such as outstanding chemical resistance, ...

In this episode of EngineeringTV Reruns, Electronic Design's Don Tuite speaks with EPC's Alex Lidow about how eGaN FETs work.

In a bold challenge to silicon s long-held dominance in electronics, Penn State researchers have built the world s first working CMOS computer entirely from atom-thin 2D materials. Using ...

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...

These prototype processors made from atomically thin materials offer a glimpse into a post-silicon-transistor future, but scaling challenges remain. Read the paper: A complementary two-dimensional ...

This conceptual illustration of a computer based on 2D molecules displays an actual scanning electron microscope image of the computer fabricated by a team by researchers at Penn State. The keyboard ...