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This limit is fundamental for charge-based switching devices that are, once the charge is placed in one of the wells, allowed to reach thermal equilibrium.

Theoretical work has highlighted the potential of using devices in which spin-polarized carries are injected in single molecular magnets, and a few experiments have shown promising results. The ...

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Abstract: We numerically calculate characteristics of all-optical gate switches employing cascaded second harmonic generation and difference frequency mixing in quasi-phase-matched LiNbO 3 devices.

The following topics are dealt with: wide band gap semiconductors; silicon compounds; gallium compounds; III-V semiconductors; power MOSFET; switching convertors; DC-DC power convertors; high electron ...