Understanding the magnetic materials inside devices like chokes and transformers can help guide engineers to make smart ...

Improved contact resistance and RF output key toward mobile-compatible E-mode GaN-on-Si transistors. LEUVEN (Belgium), June 12, 2025 — Imec, ...

Several factors, including valuation correction, weak industrial demand due to weak corporate earnings, FII outflows, and ...

MIT researchers have designed a compact, low-power receiver for 5G-compatible smart devices that is about 30 times more resilient to a certain type of ...

Rohm, a maker of SiC, GaN and silicon power devices, has added its name to companies supporting NVIDIA’s new 800V High Voltage Direct Current (HVDC) architecture, designed for megawatt-scale AI ...

Interview - As global economies push for decarbonization and energy security, industrial models must evolve. This requires ...

Looking for the best AC in India but don’t know which one to choose? To decide the same, you must be knowledgeable of the ...

Discover how Penn State’s 2D CMOS computer breakthrough paves the way for ultra-efficient, atomic-scale electronics beyond silicon.

WELCOME TO ALBERTA — Prime Minister MARK CARNEY and President DONALD TRUMP are booked for a bilateral meeting at 9 a.m. local ...