While you’re trying to figure out if you’re going to invest in a new iPhone 17 this fall, we always like to remind YOU that ...

The breakthrough is inspired from the gate-all-around field-effect transistor (GAAFET) structure, where the gate is encircled entirely by the transistor source, as opposed to being half-encircled ...

Texas A&M University-Kingsville researchers and partners reported on the presence of negative differential resistance in a gate-all-around field effect transistor (GAAFET).

Abstract: Tunnel field-effect transistor (TFET ... we comprehensively examined the effects of the gate-source (G-S) overlap/underlap and the source doping gradient (SDG) of the n-type Si cylindrical ...

ABSTRACT: Based on the binary MOSFET and FinFET field-effect transistors, we have respectively designed ... In addition, the arithmetic and logical operation rules of ternary are given. All the above ...

Abstract: This work deals with the performance of Gate-All-Around Field Effect Transistors (GAAFETs) as influenced by halo doping, wherein structural and electrical characteristics are explored. A ...

TSMC laid out a dazzling array of technologies at its 2025 Europe Technology Symposium in Amsterdam yesterday. Starting with the ‘last and best finfet ...

Modern transistors and interconnects have significant topography, and chips like 3D NAND have extremely deep vertical channel holes. Depth-of-field limitations mean ... multi-layer defects in logic ...

Semiconductors are the foundation of electronic and Internet of Things (IoT) devices and telecommunication equipment. They ...