One implementation of the two materials in RF power amplifiers is as a stack, known as GaN-on-SiC, which was intended to give ...

Abstract: A simple and physically insightful model for predicting the switching transients of SiC MOSFETs and GaN HEMTs in power electronic half-bridges is proposed in this research. The proposed ...

IceGaN is a form of smart power HEMT that features advanced sensing and protection capabilities. According to Daniel Murphy, ...

Technological innovations in power electronics are not only essential for the success of the energy transition, they also ...

At the upcoming PCIM Conference (6th - 8th May, Nuremberg, Germany) Fraunhofer IAF will present a paper on a novel GaN ...

Cambridge GaN Devices’s hybrid architecture for power ... CGD's Combo ICeGaN pairs smart the company’s ICeGaN HEMT ICs and IGBTs. Products based on the Combo ICeGaN architecture take advantage ...

imec, the research and innovation hub, has presented research that shows that despite their positive bias (on-state) instability GaN MISHEMTs (Metal-Insulator ... power amplifiers typically use GaAs) ...

SINGAPORE: In under 20 years, Punggol has become “a shining model of Singapore's heartland”, but it is not yet perfect and can be improved even further, said Deputy Prime Minister Gan Kim Yong ...

Neuroscientists have observed for the first time how structures deep in the brain are activated when the brain becomes aware of its own thoughts, known as conscious perception. The brain is ...