Engineers from Stanford University are claiming to have broken new ground with the first post-process diamond integration of ...

Rohm has introduced a tiny 20A 30V common-source dual mosfet for switching power rails on and off. On-resistance in AW2K21 is ...

ROHM has responded to this requirement with the development of an ultra-compact low ON-resistance MOSFET that’s been ...

Santa Clara, CA and Kyoto, Japan, July 08, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the ...

We proposed a new model for gated-anode diodes (GADs) based on gallium nitride (GaN) high-electron mobility transistors (HEMTs) to optimize the device structure toward efficient microwave ...

Product security and reliability are major concerns in the semiconductor and PCB fabrication industries. Because of this, ...

AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have become a promising candidate for use in efficient power conversion applications. In order to realize ...

In this article, we summarize a novel concept that combines an integrated GaN HEMT with silicon Insulated Gate Bipolar Transistors (IGBTs).

Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2mΩ (typ.) in a compact 2mm × 2mm package.

By integrating a negative capacitance dielectric, the researchers have removed this constraint. They say their results demonstrate that negative capacitance can break conventional electrostatic limits ...