Until recently, most studies on subgap states focused on amorphous IGZO, as sufficiently large single-crystal IGZO (sc-IGZO) ...

The 70 mm x 60 mm board, which comes with a MAX40661 transimpedance amplifier, is designed to accelerate design and ...

In recent years, an increasing trend towards GaN integration can be observed, enabled by the lateral structure of the GaN technology. A key improvement over a discrete implementation is the ...

This work presents the design, fabrication, and measurements of a GaN-HEMT with a back-gated segment and pull-down pin in a GaN-on-Si technology. The device is designed for the use in high voltage ...