One implementation of the two materials in RF power amplifiers is as a stack, known as GaN-on-SiC, which was intended to give ...

IceGaN is a form of smart power HEMT that features advanced sensing and protection capabilities. According to Daniel Murphy, ...

Technological innovations in power electronics are not only essential for the success of the energy transition, they also ...

At the upcoming PCIM Conference (6th - 8th May, Nuremberg, Germany) Fraunhofer IAF will present a paper on a novel GaN ...

SINGAPORE: In under 20 years, Punggol has become “a shining model of Singapore's heartland”, but it is not yet perfect and can be improved even further, said Deputy Prime Minister Gan Kim Yong ...

A gridded wooden structure formed using traditional joinery makes up The Grand Ring, which Japanese studio Sou Fujimoto Architects has used to encircle the Expo 2025 Osaka in Japan. At 61,035 ...

In a LinkedIn post on Saturday (April 26), Deputy Prime Minister Gan Kim Yong, who is also Trade and Industry Minister, said he had a “productive” virtual meeting with US Secretary of Commerce ...

WE wish to suggest a structure for the salt of deoxyribose nucleic acid (D.N.A.). This structure has novel features which are of considerable biological interest. A structure for nucleic acid has ...

Abstract: Galliumnitride (GaN) high electron mobility transistor (HEMT) and silicon (Si) Metal-Oxide semiconductor field effect transistor (MOSFET) power devices exhibit greatly reduced conduction ...

Navitas Semiconductor has announced that its high-power GaNSafe ICs have achieved automotive qualification for AEC-Q100 and AEC-Q101, showcasing GaN's next inflection into the automotive market. The ...

Despite being a high-voltage and compact product, its structure permits heat to dissipate through the PCB, allowing usage with decreased heat generation. Seb Springall is a seasoned editor at ...