Engineers from Stanford University are claiming to have broken new ground with the first post-process diamond integration of ...

ROHM has responded to this requirement with the development of an ultra-compact low ON-resistance MOSFET that’s been ...

Santa Clara, CA and Kyoto, Japan, July 08, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the ...

In recent years, an increasing trend towards GaN integration can be observed, enabled by the lateral structure of the GaN technology. A key improvement over a discrete implementation is the ...

This letter reports a monolithic high-efficiency buck converter using all depletion-mode (d-mode) gallium nitride (GaN) HEMTs which integrates a dead-time generating driving circuit and a power stage.

Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2mΩ (typ.) in a compact 2mm × 2mm package.

By integrating a negative capacitance dielectric, the researchers have removed this constraint. They say their results demonstrate that negative capacitance can break conventional electrostatic limits ...