Santa Clara, Calif., Sept. 20, 2017 – GLOBALFOUNDRIES today announced plans to introduce a new 12nm Leading-Performance (12LP) FinFET semiconductor manufacturing process. The technology is expected to ...

The 14nm-XM offering is based on a modular technology architecture that uses a 14nm FinFET device combined with elements of GLOBALFOUNDRIES’ 20nm-LPM process, which is well on its way to production.

Experts at the Table: As leading-edge lithography nodes push further into EUV and beyond, mask-making has become one of the most critical and costly aspects of semiconductor manufacturing. At the same ...

A new technical paper titled “Die-Level Transformation of 2D Shuttle Chips into 3D-IC for Advanced Rapid Prototyping using Meta Bonding” was published by researchers at Tohoku University.