News

Physicists figure out how an electric field can switch off superconductivity
Transistors are fundamental to microchips and modern electronics. Invented by Bardeen and Brattain in 1947, their development ...
C&EN2d
Solvation Effects on the Electrical Properties of a Microfluid-Assisted Solution Field-Effect Transistor with Atomically Thin MoS
Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, 2-1-1, Katahira, Aoba-Ku, Sendai 9800877, Japan ...
AZoNano3d
Utilizing Back-Gate Voltage Biases for 2D Materials
significant research has centered around non-volatile floating gate transistors. These transistors are explored as effective means for high-performance information storage. 1,2 Van der Waals (vdW) ...
IEEE3d
Incremental Drain-Voltage-Ramping Training Method for Ferroelectric Field-Effect Transistor Synaptic Devices
Abstract: We demonstrate a HfZrO 2 (HZO) ferroelectric field-effect transistor fabricated on a silicon-on-insulator substrate, targeting MHz synaptic device applications. Stable multistate weights ...
C&EN4d
Organic Single-Crystalline p–n Heterojunctions for High-Performance Ambipolar Field-Effect Transistors and Broadband Photodetectors
Materials Research Institute and School of Physics and Astronomy, Queen Mary University of London, Mile End Road, E1 4NS London, U.K. Materials Research Institute and School of Physics and Astronomy, ...
IEEE6d
Diamond thin-film recessed gate field-effect transistors fabricated by electron cyclotron resonance plasma etching
Abstract: A new technique for etching boron-doped homoepitaxial diamond films was used to fabricate mesa-isolated recessed gate field-effect transistors that operate at temperatures up to 350 degrees ...