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IEEE19h
Field-Effect Transistors Using Silicon Nanowires Prepared by Electroless Chemical Etching
Silicon nanowires, prepared by electroless chemical etching, are used to fabricate dual-gate field-effect transistors. The diameters of the nanowires vary from 40-300 nm, with a maximum aspect ratio ...
Add a twist to π-molecules: A new design strategy for organic semiconductor materials
A research team has synthesized three-dimensionally shaped molecules containing an internal twist and shown that they possess ...
C&EN1d
Modularized Field-Effect Transistor Biosensors | Nano Letters - ACS Publications
Field-effect transistors (FETs), when functionalized with proper biorecognition elements (such as antibodies or enzymes), represent a unique platform for real-time, specific, label-free transduction ...
IEEE4d
Graphene field-effect transistors using large-area monolayer graphene grown by chemical vapor deposition on Co thin films | IEEE Conference Publication | IEEE Xplore
There has been great interest in methods for the synthesis of high-quality, large-area graphene films, as required for practical applications in the electronics industry. In particular, recent ...
C&EN4d
Simple Solvent Engineering for High-Mobility and Thermally Robust Conjugated Polymer Nanowire Field-Effect Transistors | ACS Applied Materials & Interfaces - ACS Publications
Electron donor (D)–acceptor (A)-type conjugated polymers (CPs) have emerged as promising semiconductor candidates for organic field-effect transistors. Despite their high charge carrier mobilities, ...