This paper demonstrates a self-powered vibration sensor based on a three-dimensional (3D) graphene field effect transistor (GFET). A 3D microtubular cantilever structure is adopted to develop the ...

Silicon nanowires, prepared by electroless chemical etching, are used to fabricate dual-gate field-effect transistors. The diameters of the nanowires vary from 40-300 nm, with a maximum aspect ratio ...