In this paper, we introduce a new BIMOS transistor fabricated with 28nm high-k metal-gate FDSOI UTBB technology. The device is highly flexible and reconfigurable as it can be operated in MOS, Bipolar, ...

This study addressed this gap by investigating the thermal field configuration and growth techniques for nominally 4.5-in. InP single crystals using the VGF-VB method. In this process, the VGF method ...

BUFFALO, N.Y. (WIVB) — A former Lancaster police officer was charged after he allegedly rammed his vehicle through a gate at the Buffalo Niagara International Airport and proceeded to drive ...