SK hynix's DRAM memory chip roadmap for the next 30 years includes 4F2VG (vertical gate) tech, 3D DRAM, and more innovation ...

Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the ...

This transistor is a gate-all-around field-effect transistor (GAAFET). Unlike previous leading transistor designs like the fin field-effect transistor (FinFET), a GAAFET transistor wraps sources ...

The continuous advances in micro- and nanofabrication technologies have inevitably led to major improvements in field-effect transistor (FET ... a small-scale array of large-area electrolyte-gated ...

The threshold voltage and onset voltage for p-channel and n-channel regimes of solution-processed ambipolar organic transistors with top-gate/bottom-contact (TG/BC ... gate voltage directions without ...

which the researchers believe are the smallest 3D transistors ever reported. At that scale, some quantum effects come into play that let the transistors bypass the physical limits of silicon.

Abstract: The channel length in vertical organic field effect transistors (VOFETs ... as the charge carrier injection takes place from the bottom side of the contact, and hence, the applied gate ...

A field effect transistor (FET) is a carrier device with three terminals ... and Sensing Mechanisms FET sensors have three primary structural components: source, drain, and bottom or top gate.

1 Graphene can function as a reliable substitute for silicon in field effect transistors ... compared to traditional transistors. GFETs are compatible with high-k dielectric materials, such as SiO2, ...

(Nanowerk Spotlight) Organic semiconductors have long held promise for enabling deformable electronic devices that can be manufactured at low cost and high volumes using printing techniques. However, ...

High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond. Advanced Science , 2024; DOI: 10.1002/advs.202306013 Cite This ...

Abstract: This paper proposes an analytical model for bottom gate structures of Organic Field Effect Transistors (OFETs). Structural analysis and significant advantages of top contact over bottom ...