A study in Small presents a dot-modulated aerosol printing method using pneumatic shuttering, enabling precise 3D ...

SK hynix's DRAM memory chip roadmap for the next 30 years includes 4F2VG (vertical gate) tech, 3D DRAM, and more innovation ...

Researchers from the University of Tokyo created a gate-all-around transistor made from gallium-doped indium oxide (InGaOx).

Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the ...

Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, 2-1-1, Katahira, Aoba-Ku, Sendai 9800877, Japan ...

In this work, we present a monolithic bi-directional GaN/SiC hybrid field-effect transistor (BD-HyFET). The device combines the merits of SiC junction field-effect transistor (JFET) structure and ...

Materials Research Institute and School of Physics and Astronomy, Queen Mary University of London, Mile End Road, E1 4NS London, U.K. Materials Research Institute and School of Physics and Astronomy, ...

Two contact strategies, van der Waals (vdW) metallic contact and bulk semimetallic contact, are identified as promising solutions to achieving Schottky-barrier-free and low-contact-resistance p-type ...