GLOBALFOUNDRIES Launches Industry’s First 28nm ARM Cortex-A9 Processor Platform With Gate First High-K Metal Gate Qualification Vehicles Will Enable Smooth Production Ramp-up and Faster Time-to ...

PARIS — Process choice and architectural unification will lower total power consumption by 50 percent, while increasing capacity by two and driving down costs, says Xilinx about the high-k metal gate ...

TSMC announced earlier that high-k/metal-gate will appear at 32nm, but it seems that it will be pushed back to 28nm. Rivals IBM and Samsung will have high-k/metal-gate at 32nm. More here .

Developed in collaboration with EDA/IP ecosystem leaders and based on GLOBALFOUNDRIES’ 28nm Super Low Power (SLP) technology with Gate First High-k Metal Gate (HKMG), the flows are precisely ...

The group is claiming a 40% performance boost and a 20% reduction in power consumption. This along with High-K Metal gate to reduce leakage makes the tiny process perfect for small, low power devices.

IBM's Manufacturing Alliance has defined a 28nm high K metal gate cmos process which extends the joint development agreements between the partners. Early risk production is anticipated to start in the ...

Risk production expected in Q3 2010 HSINCHU, Taiwan, R.O.C. -- Aug. 24, 2009 -- Taiwan Semiconductor Manufacturing Company, Ltd. (TWSE: 2330, NYSE: TSM) today announced that it is adding a low power ...

Like 28nm, it incorporates high-k/metal-gate, copper interconnects and low-k dielectrics. This approach has some pros and cons. On the plus side, it’s an extension of 28nm and chipmakers can use the ...

GlobalFoundries, in contrast, focused its efforts on gate-first design and went with high-k metal gate across the 28nm process. Between the two companies, ...

Qualcomm CDMA Technologies said it will not use a high-k/metal gate (HKMG) process for most of the chips it makes at the 28 nm node, sticking with a poly/SiON gate stack. The company described the ...

Metal-gate-first FD-SOI reduces the minimum SRAM supply voltage (VCCmin) below 0.7V and metal-gate-last FD-SOI at 28nm can reduce VCCmin even further to below 0.5V.” Asked what is the comparable SRAM ...

Samsung has announced new DDR5 modules built with an industry-first high-k metal gate dielectric. The new modules use less power and can hit transfer rates of up to 7200Mbps.