28nm Super Low Power (28nm-SLP) is the low-power CMOS offering delivered on bulk silicon substrate for mobile consumer and digital consumer applications. GlobalFoundries’ 28nm-SLP process technology ...

The 3.3V capable GPIO is an IP macro for on-chip integration. It is a 3.3V general purpose I/O built with a stack of 1.8V thick oxide MOS devices. It is controlled by 0.9V (core) signals. ... The ...

Imec, in collaboration with Vrije Universiteit Brussel, Brussels, Belgium, presents the world's first 79 GHz radar transmitter implemented in plain digital 28nm CMOS. With an output power above ...

Claiming a world first, Belgian research institute imec has demonstrated a continuous wave radar transmitter implemented in 28nm CMOS that operates in the 79GHz band. With a supply voltage of 0.9V, ...

AMD senior vice president and chief technology officer Mark Papermaster revealed the firm will fully switch from the existing SOI manufacturing process to 28nm bulk CMOS:. As for GPU manufacturing ...

Fujitsu Semiconductor Europe, a market-leading provider of high-speed data converters, has enabled the large-scale deployment of single-wavelength 100Gbps optical transport systems worldwide.

“There has been a great interest in designing ICs in these processes, with about 300 projects having been designed in 90nm (phased out in 2009), and 200 already in 65nm,” said Bernard Courtois, ...

Fabricated on a 28nm CMOS process, the device is said to address multi-standard production instrumentation, as well as providing greater detection range and sensitivity for defence applications. The ...

The 4.15 mm² transceiver chip is integrated in 28nm bulk CMOS technology, ensuring a low-cost solution at high volume production. A reference module design is available for the single-channel radar, ...

Date: 26/02/2017 Automotive RADAR technology based on an advanced 28nm CMOS process Analog Devices announced 28 nm CMOS radar chip developing platform for advanced safety and autonomous driving ...

The 3.3V capable GPIO is an IP macro for on-chip integration. It is a 3.3V general purpose I/O built with a stack of 1.8V thick oxide MOS devices. It is controlled by 0.9V (core) signals. ... The ...