A novel anti-fuse memory array is presented in this paper featuring one-capacitor (1C) per bit-cell design and fully compatible with 14nm FinFET CMOS technology. The rectifying I-V characteristics of ...

Samsung Electronics’ foundry division is struggling to secure large orders from major tech companies for its advanced sub-3 ...

Samsung Electronics is recalibrating its semiconductor foundry roadmap, putting the spotlight squarely on refining its 2 nm ...

In a report from Nikkei, the company may also be mulling a return to more cutting-edge semiconductors by working with Intel ...

This letter presents a 10–60-GHz low-noise amplifier (LNA) implemented in CMOS FinFET technology. The LNA consists of four gain-staggered cascode stages to cover the wide bandwidth. Resistive feedback ...

CDNS and Samsung extend their collaboration to accelerate next-gen chip design with AI-driven IP on advanced nodes.

Cadence and Samsung collaborated on comprehensive full-flow power integrity analysis for 3D-ICs spanning the entire process, from early exploration to final signoff, and employing advanced Cadence ...

UTokyo and Taiwan Semiconductor launched a joint lab for semiconductor research and talent incubation, aiming to advance sustainable technologies.