A novel anti-fuse memory array is presented in this paper featuring one-capacitor (1C) per bit-cell design and fully compatible with 14nm FinFET CMOS technology. The rectifying I-V characteristics of ...

Samsung Electronics’ foundry division is struggling to secure large orders from major tech companies for its advanced sub-3 ...

Samsung Electronics is recalibrating its semiconductor foundry roadmap, putting the spotlight squarely on refining its 2 nm ...

Technology computer-aided design (TCAD) simulations are used to clarify the underlying mechanisms affecting single-event upset (SEU) results at 7-, 5-, and 3-nm bulk FinFET technologies using ...

In a report from Nikkei, the company may also be mulling a return to more cutting-edge semiconductors by working with Intel ...