By dumping silicon for indium-oxide, researchers have made tiny transistors that outperform devices previously made.

Shrinking computers, faster phones, and smarter gadgets all rely on one tiny component: the transistor. Invented in the 20th century, it’s what powers nearly every modern electronic device.

Infineon introduces rad-hard GaN transistors, including one of the first DLA JANs-certified GaN devices, for space applications.

Shrinking computers, faster phones, and smarter gadgets all rely on one tiny component: the transistor. Invented in the 20th ...

Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its CoolGaN technology. The company said the in-house manufactured transistors ...

Infineon Technologies AG today announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its proven CoolGan technology ...

Researchers at the Institute of Industrial Science , The University of Tokyo, produce tiny transistors with high performance and reliability through the use of an innovative material and design ...

Abstract: We demonstrate a 1MBit array of 1-Transistor-8-Resistive RAM (1T8R) memory fabricated using a foundry logic technology. Using a gradual SET/RESET programming scheme, sixteen conductance ...

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National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking ...

Abstract: Mechanisms for dose-rate dependent effects of ionizing radiation are described. Bimolecular mechanisms are shown to produce reduced effects at high dose rates. Calculations using such ...