Samsung Electronics is recalibrating its semiconductor foundry roadmap, putting the spotlight squarely on refining its 2 nm ...

To fabricate their devices, Li and co-workers began by using pulsed laser deposition (PLD) to grow a roughly 50 nm-thick film ...

14 A is equivalent to 1.4 nm and IMEC expects it will be succeed by 10 A or 1 nm in 2029. IMEC sees that progression carrying ...

Bets farm on 2nm Samsung’s foundry arm is pressing pause on its hyped 1.4nm production ambitions, opting instead to dump ...

Intel has published a paper about its 18A (1.8nm-class) fabrication process at the VLSI 2025 symposium, consolidating all its information about the manufacturing technology into a single document. The ...

Vertical field effect transistors (VFETs) using graphene and transition metal dichalcogenide (TMD) heterostructures are promising for downsizing the channel length to a monolayer TMD thickness of 0.65 ...

Although gate-all-around field-effect transistor (GAAFET) possess stronger gate control capabilities compared to FinFET, continuous scaling down of the horizontal gate length remains challenging. In ...

By then, 2 nm technology will no longer be dewy-eyed. The global market leader TSMC, for example, wants to start series production with the so-called N2 process this year, as does Intel Foundry ...

Apple chipmaker TSMC says that it will make chips with a sub-2nm process size for the first time ever in 2028, and that the development of 1.4nm chips will allow for greater AI capabilities.

Timeline: A14 enters volume production in 2028 after the 2 nm node ramps in late 2025. Performance Gains: +15% speed at the same power draw versus 2 nm +20% logic density, enabling more transistors on ...

TSMC has rolled out its new A14 node, marking its first foray into the 1.4 nm-class manufacturing tech, and it’s already boasting serious gains in performance, power efficiency, and logic density.

A new two-transistor logic resistive random-access memory (RRAM) cell with a 16-nm standard FinFET CMOS logic platform that is fully compatible with the CMOS process is proposed and demonstrated in a ...