Chinese researchers claim to have developed the fastest non volatile flash memory to date, but it needs a better name than ...

A research team at Fudan University has built the fastest semiconductor storage device ever reported, a non‑volatile flash memory dubbed “PoX” that programs a single bit in 400 picoseconds ...

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Nutanix has taken a step toward its vision of becoming the platform of choice by announcing a pivotal partnership with Pure ...

Developed by a research team at Fudan University, the device — named PoX — achieves 400-picosecond operation, surpassing the speed of today’s fastest volatile memory. According to the research team’s ...

Existing storage architectures come with stubborn limitations. While volatile memory – like SRAM and DRAM – offers high speeds, it suffers from low capacity, high power consumption ...

Now, a new partnership between Ferroelectric Memory Co. and Neumonda aims to revive the nation's semiconductor ambitions with DRAM+, a non-volatile memory technology powered by ferroelectric ...

Innovations in Analog Memory and Architecture - Artificial Intelligence (AI) is undergoing a significant transformation, driven by advancements in algorithms ...

The speed of information access directly impacts the upper limit of computing power, researchers said, and non-volatile storage has become key to achieving ultra-low power consumption. Today's fastest ...